PMPB24EPX
MOSFET P-CH 30V 6.4A DFN2020MD-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMPB24EPX is a P-Channel MOSFET designed for demanding applications. This component offers a 30V drain-source breakdown voltage and supports a continuous drain current of 6.4A at 25°C ambient temperature. The device features a low on-resistance of 28mOhm maximum at 6.4A and 10V Vgs. It is housed in a compact DFN2020MD-6 package with an exposed pad, suitable for surface mounting. Key parameters include a gate charge of 28nC at 10V and input capacitance of 1069pF at 15V. Maximum power dissipation is rated at 1.8W ambient and 15.6W case temperature. This MOSFET is utilized in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.4A (Ta) |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 6.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 15.6W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1069 pF @ 15 V |
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