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PMPB19R0UPEX

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PMPB19R0UPEX

SMALL SIGNAL MOSFETS FOR PORTABL

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. PMPB19R0UPEX is a P-Channel Power MOSFET designed for efficient power management in portable applications. This surface mount device, housed in a DFN2020M-6 package, features a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain current (Id) of 7.6 A at 25°C ambient temperature. The low on-resistance of 21 mOhm at 7.6 A and 4.5 V Vgs makes it suitable for applications requiring minimal power loss. Key parameters include a maximum Gate Charge (Qg) of 24 nC at 4.5 V and an input capacitance (Ciss) of 1275 pF at 10 V. With a maximum power dissipation of 1.8 W (ambient) and 12.5 W (case), this MOSFET operates across a temperature range of -55°C to 150°C. It finds utility in consumer electronics and mobile devices.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.6A (Ta)
Rds On (Max) @ Id, Vgs21mOhm @ 7.6A, 4.5V
FET Feature-
Power Dissipation (Max)1.8W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device PackageDFN2020M-6
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1275 pF @ 10 V

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