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PMPB16EPX

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PMPB16EPX

MOSFET P-CH 30V 7.5A DFN2020MD-6

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. PMPB16EPX is a P-Channel MOSFET with a Drain-to-Source Voltage (Vdss) of 30V. This component offers a continuous drain current (Id) of 7.5A at 25°C (Ta) and a maximum power dissipation of 2W (Ta) or 12.5W (Tc). The Rds On is specified at a maximum of 20mOhm at 7.5A, 10V. Key parameters include a Gate Charge (Qg) of 44 nC (max) at 10V and Input Capacitance (Ciss) of 1418 pF (max) at 15V. The part is housed in a DFN2020MD-6 package and is supplied on Tape & Reel (TR). Drive voltages range from 4.5V to 10V, with a ±25V maximum Gate-to-Source voltage. This MOSFET is suitable for applications in industrial and automotive sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C7.5A (Ta)
Rds On (Max) @ Id, Vgs20mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id2.5V @ 250µA
Supplier Device PackageDFN2020MD-6
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±25V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1418 pF @ 15 V

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