PMPB14R8XNX
SMALL SIGNAL MOSFETS FOR PORTABLManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMPB14R8XNX is a high-performance N-Channel MOSFET designed for demanding applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 7.3A at 25°C, with a power dissipation of 1.5W (Ta) and 18W (Tc). The Nexperia PMPB14R8XNX offers a low on-resistance of 18.4mOhm at 7.3A and 4.5V Vgs, supported by drive voltages ranging from 1.8V to 4.5V. Its DFN2020M-6 package with an exposed pad ensures efficient thermal management. The gate charge is specified at a maximum of 6.5 nC @ 4.5V, with input capacitance (Ciss) not exceeding 500 pF @ 15V. This MOSFET is suitable for use in portable electronics and other power management applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 18.4mOhm @ 7.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 18W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020M-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 15 V |
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