PMPB14R7EPX
MOSFET P-CH 30V 8A DFN2020M-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PMPB14R7EPX is a P-channel power MOSFET designed for efficient power management solutions. This component features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 8A at 25°C ambient. Its low on-resistance (Rds(on)) of 18mOhm at 8A and 10V gate-source voltage (Vgs) minimizes conduction losses. The PMPB14R7EPX exhibits a gate charge (Qg) of 44 nC at 10V and an input capacitance (Ciss) of 1418 pF at 15V, facilitating fast switching performance.
With a maximum power dissipation of 1.9W (Ta) and 12.5W (Tc), it operates across a wide temperature range of -55°C to 150°C. The MOSFET is housed in a compact 6-UDFN Exposed Pad (DFN2020MD-6) package, suitable for surface mounting. Applications for this device include automotive, industrial, and consumer electronics where high-efficiency power switching is critical. The ±20V Vgs rating and 2.5V Vgs(th) ensure robust gate drive characteristics. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1418 pF @ 15 V |
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