PMPB12R5EPX
PMPB12R5EP - 30 V, P-CHANNEL TREManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PMPB12R5EPX is a P-channel TrenchMOS™ MOSFET designed for demanding applications. This component features a 30 V drain-source voltage and a continuous drain current of 8.8 A at 25°C (Ta), with a maximum power dissipation of 1.9 W (Ta) and 12.5 W (Tc). The device offers a low on-resistance of 15 mOhm at 8.8 A and 10 V, facilitated by a gate drive voltage range from 4.5 V to 10 V. Its surface mountable DFN2020M-6 package with an exposed pad ensures efficient thermal management. Key electrical parameters include a maximum gate charge (Qg) of 44 nC at 10 V and a maximum input capacitance (Ciss) of 1392 pF at 15 V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in automotive, industrial, and power management systems. This component is supplied in tape and reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 15mOhm @ 8.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DFN2020M-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 44 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1392 pF @ 15 V |
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