PMPB12EPX
MOSFET P-CH 30V 7.9A DFN2020MD-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMPB12EPX is a P-channel TrenchMOS™ MOSFET designed for demanding applications. This surface mount component features a 30V drain-to-source voltage and a continuous drain current of 7.9A (Ta) at 25°C. The DFN2020MD-6 package offers excellent thermal performance with a maximum power dissipation of 1.7W (Ta) and 13W (Tc). Key parameters include a maximum on-resistance of 17.3mOhm at 7.9A and 10V Vgs, and a gate charge (Qg) of 39.9 nC at 10V. Input capacitance (Ciss) is rated at 227 pF at 15V. This MOSFET is suitable for use in automotive and industrial control systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta) |
| Rds On (Max) @ Id, Vgs | 17.3mOhm @ 7.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 13W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 39.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 227 pF @ 15 V |
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