PMPB10UPX
MOSFET P-CH 12V 10A DFN2020MD-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia PMPB10UPX is a P-channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 10A at 25°C (Ta). It boasts a low on-resistance (Rds On) of 11.5mOhm at 10A and 4.5V, with a drive voltage range of 1.8V to 4.5V. The MOSFET is housed in a compact DFN2020MD-6 package with an exposed pad for enhanced thermal performance, supporting a maximum power dissipation of 1.7W (Ta). Key electrical parameters include a gate charge (Qg) of 40nC at 4.5V and an input capacitance (Ciss) of 2200pF at 6V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.5mOhm @ 10A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.7W (Ta), 13mW (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 6 V |
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