PMPB09R5VPX
PMPB09R5VP - 12 V, P-CHANNEL TREManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ P-Channel MOSFET, part number PMPB09R5VPX. This 12 V device features a maximum continuous drain current of 10.5 A at 25°C (Ta) with a power dissipation of 1.9 W (Ta) and 12.5 W (Tc). The PMPB09R5VPX offers a low on-resistance of 12 mOhm at 10.5 A and 4.5 V, with drive voltages ranging from 1.5 V to 4.5 V. Key parameters include a gate charge of 46 nC at 4.5 V and input capacitance of 2700 pF at 6 V. The device operates within a temperature range of -55°C to 150°C (TJ). Packaged in a 6-UDFN exposed pad (DFN2020M-6) and supplied on tape and reel (TR), this MOSFET is suitable for applications in automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 12mOhm @ 10.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020M-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 46 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 6 V |