PMPB09R1XNX
SMALL SIGNAL MOSFETS FOR PORTABLManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia's PMPB09R1XNX is an N-Channel MOSFET with a 30 V drain-source voltage rating. This component, housed in a compact DFN2020M-6 package, offers a continuous drain current of 9.3A at 25°C (Ta) and a maximum on-resistance of 11.2mOhm at 9.3A and 4.5V Vgs. It features a gate charge of 12.2 nC at 4.5V and an input capacitance of 940 pF at 15V. Power dissipation is rated at 1.5W (Ta) and 21W (Tc). This surface mount device operates across a temperature range of -55°C to 150°C. The PMPB09R1XNX is suitable for applications in portable electronics and power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 9.3A (Ta) |
| Rds On (Max) @ Id, Vgs | 11.2mOhm @ 9.3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 21W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020M-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 12.2 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 940 pF @ 15 V |
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