PMPB08R6ENX
MOSFET N-CH 30V 11A DFN2020M-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PMPB08R6ENX is an N-channel power MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 11A at 25°C (Ta). The device boasts a low on-resistance of 10.5mOhm at 11A and 10V, contributing to efficient power delivery. With a low gate charge of 20.6 nC (max) at 10V and an input capacitance of 840 pF (max) at 15V, it facilitates fast switching performance. The PMPB08R6ENX is housed in a compact DFN2020MD-6 package with an exposed pad, suitable for surface mounting. It offers a maximum power dissipation of 1.9W (Ta) and 12.5W (Tc), with an operating temperature range of -55°C to 150°C (TJ). This MOSFET finds application in automotive, industrial, and power management sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 11A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 840 pF @ 15 V |
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