PMPB08R4VPX
MOSFET P-CH 12V 12A DFN2020M-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PMPB08R4VPX is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 12V and a continuous drain current (Id) of 12A at 25°C. The PMPB08R4VPX offers a low Rds(on) of 9.6mOhm at 12A and 4.5V Vgs, with a gate charge (Qg) of 40 nC maximum at 4.5V. Its input capacitance (Ciss) is rated at 2200 pF maximum at 6V. The device is housed in a compact DFN2020MD-6 package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. Power dissipation capabilities are 1.9W (Ta) and 12.5W (Tc). This MOSFET is utilized in power management, automotive, and industrial electronics. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 12A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2200 pF @ 6 V |
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