PMPB07R3VPX
PMPB07R3VP - 12 V, P-CHANNEL TREManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc.'s PMPB07R3VPX is a P-Channel TrenchMOS™ MOSFET designed for demanding applications. This surface mount device features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 12.5A at 25°C (Ta), with a maximum power dissipation of 1.9W (Ta) and 12.5W (Tc). The PMPB07R3VPX offers a low on-resistance (Rds On) of 8.6mOhm at 12.5A and 4.5V, supported by drive voltages ranging from 1.8V to 4.5V. Key parameters include a maximum gate charge (Qg) of 40 nC at 4.5V and input capacitance (Ciss) of 2121 pF at 6V. Its 6-UDFN exposed pad package (DFN2020M-6) is suitable for high-density board designs. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET finds utility in automotive and industrial power management systems. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 8.6mOhm @ 12.5A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020M-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 12 V |
| Gate Charge (Qg) (Max) @ Vgs | 40 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2121 pF @ 6 V |