PMPB07R0UNX
MOSFET N-CH 20V 11.6A DFN2020M-6Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc.'s PMPB07R0UNX is a TrenchMOS™ N-Channel MOSFET designed for demanding applications. This component offers a 20V drain-source voltage and a continuous drain current of 11.6A at 25°C. Featuring a low on-resistance of 9mOhm at 11.6A and 4.5V Vgs, it minimizes conduction losses. The device is housed in a compact DFN2020MD-6 package, suitable for space-constrained designs. Key electrical characteristics include a gate charge of 30 nC at 4.5V and an input capacitance of 1696 pF at 10V. With a maximum power dissipation of 1.9W (Ta) and 12.5W (Tc), and operating temperature range of -55°C to 150°C, this MOSFET is well-suited for use in power management, automotive, and industrial systems. The PMPB07R0UNX is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 11.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020MD-6 |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 10 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
