PMPB07R0UNAX
SMALL SIGNAL MOSFET FOR MOBILEManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PMPB07R0UNAX is a N-Channel, 20 V MOSFET designed for efficient power switching. This surface mount component, housed in a DFN2020M-6 package with an exposed pad, offers a low Rds(on) of 9 mOhm at 11.6A and 4.5V Vgs. Key parameters include a gate charge of 30 nC at 4.5V Vgs and an input capacitance of 1696 pF at 10V Vds. Continuous drain current capability is 11.6A (Ta) with power dissipation ratings of 1.9W (Ta) and 12.5W (Tc). Operating temperature ranges from -55°C to 150°C. This component finds application in mobile devices and other portable electronics requiring compact, high-performance switching.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 11.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.9W (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | DFN2020M-6 |
| Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1696 pF @ 10 V |
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