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PMN70XPE,115

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PMN70XPE,115

MOSFET P-CH 20V 3.2A 6TSOP

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. PMN70XPE-115 is a P-Channel MOSFET designed for power management applications. This component features a Drain-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 3.2A at 25°C. The Rds On is specified at a maximum of 85mOhm at 2A drain current and 4.5V gate-source voltage, with drive voltages ranging from 2.5V to 4.5V. The device offers a maximum power dissipation of 500mW (Ta) and 6.25W (Tc). Key parameters include a Gate Charge (Qg) of 7.8 nC at 4.5V and an Input Capacitance (Ciss) of 602 pF at 10V. The PMN70XPE-115 is housed in a 6-TSOP (SC-74, SOT-457) package for surface mounting, operating across a temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Digi-Reel®Datasheet:
Technical Details:
PackagingDigi-Reel®
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C3.2A (Ta)
Rds On (Max) @ Id, Vgs85mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)500mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id1.25V @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±12V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs7.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds602 pF @ 10 V

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