PMN50UPE,115
MOSFET P-CH 20V 3.6A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PMN50UPE-115 is a P-channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 20 V and a continuous Drain Current (Id) of 3.6 A (Ta), this component offers a low on-resistance of 66 mOhm at 3.6 A and 4.5 Vgs. Its 6-TSOP (SC-74, SOT-457) surface mount package with tape and reel packaging facilitates efficient board assembly. Key electrical parameters include a maximum power dissipation of 510 mW (Ta) and a gate charge (Qg) of 15.7 nC at 10 V. This MOSFET is suitable for use in various industries, including automotive and consumer electronics, where efficient power switching is critical. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 66mOhm @ 3.6A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 510mW (Ta) |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 24 pF @ 10 V |
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