PMN40UPE,115
MOSFET P-CH 20V 4.7A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMN40UPE-115 is a P-channel MOSFET with a Drain-Source Voltage (Vdss) of 20V. It offers a continuous Drain current (Id) of 4.7A at 25°C (Ta) and a maximum Rds(on) of 43mOhm at 3A and 4.5V Vgs. The device features a gate charge (Qg) of 23 nC at 4.5V and an input capacitance (Ciss) of 1820 pF at 10V Vds. This MOSFET is housed in a 6-TSOP (SC-74, SOT-457) package, suitable for surface mounting. Power dissipation is rated at 500mW (Ta) and 8.33W (Tc). Operating temperature range is -55°C to 150°C (TJ). The drive voltage range for optimal Rds(on) is 1.8V to 4.5V. This component is utilized in power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta), 8.33W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 10 V |
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