PMN35EN,125
MOSFET N-CH 30V 5.1A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. PMN35EN-125 is an N-Channel MOSFET designed for efficient switching applications. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 5.1 A at 25°C. Its low on-resistance, specified at a maximum of 31 mOhm at 5.1 A and 10 V gate-source voltage, ensures minimal power loss. The device is housed in a compact 6-TSOP package (SC-74, SOT-457), suitable for surface mounting. Key characteristics include a maximum gate charge (Qg) of 9.3 nC and input capacitance (Ciss) of 334 pF at 15 V. With a maximum power dissipation of 500 mW (Ta), it is well-suited for use in consumer electronics and industrial control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 31mOhm @ 5.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 9.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 15 V |
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