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PMN34UP,115

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PMN34UP,115

MOSFET P-CH 20V 5A 6TSOP

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia USA Inc. PMN34UP-115 is a P-Channel MOSFET designed for efficient power switching applications. This component features a 20V drain-source voltage (Vdss) and can handle a continuous drain current of 5A at 25°C. The device offers a low on-resistance (Rds On) of 40mOhm at 2.4A and 4.5V, with a gate threshold voltage (Vgs(th)) of 950mV at 250µA. With a gate charge (Qg) of 23 nC at 4.5V, it is suitable for moderate frequency switching. The input capacitance (Ciss) is 1950 pF at 10V. This MOSFET is available in a 6-TSOP package, also known as SC-74 or SOT-457, and is supplied on tape and reel. It operates across a wide temperature range of -55°C to 150°C. Its power dissipation is rated at 540mW (Ta) and 6.25W (Tc). This component finds application in consumer electronics and industrial power management systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74, SOT-457
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs40mOhm @ 2.4A, 4.5V
FET Feature-
Power Dissipation (Max)540mW (Ta), 6.25W (Tc)
Vgs(th) (Max) @ Id950mV @ 250µA
Supplier Device Package6-TSOP
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)20 V
Gate Charge (Qg) (Max) @ Vgs23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 10 V

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