PMN27UPH
MOSFET P-CH 20V 5.7A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia PMN27UPH is a P-channel MOSFET designed for demanding applications. This component features a 20V drain-source breakdown voltage (Vds) and a continuous drain current (Id) capability of 5.7A at 25°C ambient temperature. The device offers a low on-resistance (Rds On) of 32mOhm maximum at 2.4A and 4.5V Vgs, with a gate threshold voltage (Vgs(th)) of 950mV maximum at 250µA. It supports a wide drive voltage range from 1.8V to 4.5V and has a maximum gate charge (Qg) of 31nC at 4.5V. The input capacitance (Ciss) is specified at a maximum of 2340pF at 10V. Power dissipation is rated at 540mW ambient (Ta) and 6.25W case (Tc). The PMN27UPH is housed in a 6-TSOP (SC-74, SOT-457) package, suitable for surface mounting, and is supplied on tape and reel. This MOSFET is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 10 V |
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