PMN27UP,115
MOSFET P-CH 20V 5.7A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMN27UP-115 is a P-Channel MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 5.7A at 25°C. The Rds On is specified at a maximum of 32mOhm at 2.4A and 4.5V Vgs. The device offers a low gate charge (Qg) of 31 nC at 4.5V, contributing to reduced switching losses. It is packaged in a 6-TSOP (SC-74, SOT-457) for surface mounting and operates across a temperature range of -55°C to 150°C. Power dissipation is rated at 540mW (Ta) and 6.25W (Tc). This MOSFET is suitable for use in consumer electronics, automotive, and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Ta) |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 2.4A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 540mW (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2340 pF @ 10 V |