PMN230ENEX
MOSFET N-CH 60V 1.6A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. offers the PMN230ENEX, a robust N-Channel MOSFET designed for high-performance applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 1.6A at 25°C. The low on-resistance (Rds On) of 222mOhm at 1.6A and 10V gate-source voltage (Vgs) makes it suitable for efficient power switching. With a maximum junction temperature of 150°C, it provides reliable operation in demanding environments. The device is housed in a compact 6-TSOP package (SC-74, SOT-457) and is supplied on tape and reel. Key electrical characteristics include a maximum gate charge (Qg) of 5 nC at 10V and an input capacitance (Ciss) of 177pF at 30V. This MOSFET is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Rds On (Max) @ Id, Vgs | 222mOhm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 475mW (Ta), 3.9W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 177 pF @ 30 V |
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