PMN120ENEX
MOSFET N-CH 60V 3.1A 6TSOPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. N-Channel MOSFET, part number PMN120ENEX, offers a 60V drain-source breakdown voltage and a continuous drain current capability of 3.1A at 25°C ambient. This device features a low on-resistance of 123mOhm maximum at 2.4A and 10V Vgs. The PMN120ENEX is housed in a compact 6-TSOP (SC-74, SOT-457) surface mount package, suitable for demanding applications. Key parameters include a gate charge of 7.4 nC typical at 10V Vgs and input capacitance of 275 pF maximum at 30V Vds. The MOSFET operates within a temperature range of -55°C to 150°C. Its performance characteristics make it applicable in consumer electronics and industrial power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Rds On (Max) @ Id, Vgs | 123mOhm @ 2.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.4W (Ta), 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.7V @ 250µA |
| Supplier Device Package | 6-TSOP |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 275 pF @ 30 V |
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