PML260SN,118
MOSFET N-CH 200V 8.8A DFN3333-8Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PML260SN-118 is an N-Channel power MOSFET designed for demanding applications. This device features a 200 V drain-source breakdown voltage and a continuous drain current capability of 8.8 A at 25°C, with a maximum power dissipation of 50 W (Tc). The low on-resistance, specified as 294 mOhm maximum at 2.6 A and 10 V Vgs, contributes to efficient power transfer. Key parameters include a gate charge (Qg) of 13.3 nC maximum at 10 V Vgs and input capacitance (Ciss) of 657 pF maximum at 30 V Vds. The PML260SN-118 is housed in an 8-VDFN exposed pad package (DFN3333-8) suitable for surface mounting and is supplied on tape and reel. This MOSFET is utilized in industrial equipment and automotive applications where high voltage and current handling are critical.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 294mOhm @ 2.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DFN3333-8 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.3 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 657 pF @ 30 V |
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