PMK50XP,518
MOSFET P-CH 20V 7.9A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ P-Channel Power MOSFET, PMK50XP-518, offers a 20V drain-source voltage and 7.9A continuous drain current at 25°C (Tc). This surface mount component in an 8-SOIC package features a maximum on-resistance of 50mOhm at 2.8A and 4.5V gate-source voltage. The device exhibits a typical gate charge of 10nC at 4.5V and input capacitance of 1020pF at 20V. With a power dissipation capability of 5W (Tc) and an operating temperature range of -55°C to 150°C (TJ), the PMK50XP-518 is suitable for applications in automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.8A, 4.5V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Vgs(th) (Max) @ Id | 950mV @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V |
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