PMK30EP,518
MOSFET P-CH 30V 14.9A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ P-Channel MOSFET. The PMK30EP-518 offers a 30V drain-source breakdown voltage and a continuous drain current of 14.9A at 25°C (Tc). This surface mount device features a maximum power dissipation of 6.9W (Tc) and a low on-resistance of 19mOhm maximum at 9.2A, 10V. Key characteristics include a gate charge of 50nC at 10V and input capacitance of 2240pF at 25V. The component is housed in an 8-SOIC package and operates across a temperature range of -55°C to 150°C (TJ). This MOSFET is suitable for applications in automotive and industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 14.9A (Tc) |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 9.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.9W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2240 pF @ 25 V |
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