PMCM950ENEZ
MOSFET N-CH 60V 4.8A 9WLCSPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PMCM950ENEZ is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a 60 V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.8 A at 25°C ambient temperature. The Rds On is specified at a maximum of 41 mOhm when conducting 3 A with a 10 V gate-source voltage. Key parameters include a gate charge (Qg) of 45 nC at 10 V and input capacitance (Ciss) of 1160 pF at 30 V. The device offers a maximum power dissipation of 780 mW (Ta) or 12.5 W (Tc). It is housed in a compact 9-WLCSP (1.48x1.48) package, suitable for space-constrained designs. Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET is typically employed in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 9-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.8A (Ta) |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 780mW (Ta), 12.5W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 9-WLCSP (1.48x1.48) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160 pF @ 30 V |
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