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PMCM440VNEZ

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PMCM440VNEZ

MOSFET N-CH 12V 3.9A 4WLCSP

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. PMCM440VNEZ is an N-channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 12V and a continuous drain current (Id) capability of 3.9A at 25°C. The device exhibits a maximum On-Resistance (Rds On) of 67mOhm at 3A and 4.5V gate drive. With a gate charge (Qg) of 8.2 nC at 4.5V and input capacitance (Ciss) of 360 pF at 6V, it is optimized for high-frequency operation. The MOSFET is housed in a compact 4-WLCSP (0.78x0.78) package, suitable for space-constrained designs. Power dissipation is rated at 400mW (Ta) and 12.5W (Tc), with an operating temperature range of -55°C to 150°C. This MOSFET finds application in various industries including consumer electronics and portable devices.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFBGA, WLCSP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Rds On (Max) @ Id, Vgs67mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)400mW (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device Package4-WLCSP (0.78x0.78)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 6 V

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