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PMCM440VNE/S500Z

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PMCM440VNE/S500Z

MOSFET N-CHANNEL 12V 5A 4WLCSP

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Nexperia TrenchMOS™ MOSFET, part number PMCM440VNE-S500Z, is a high-performance N-channel device designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous drain current capability of 5A (Ta) with a maximum power dissipation of 12.5W (Tc). Optimized for efficiency, it offers a low Rds On of 67mOhm at 3A and 4.5V. The device utilizes a 4-WLCSP package with dimensions of 0.78x0.78, suitable for advanced miniaturization. Key electrical parameters include a Gate Charge (Qg) of 8.2 nC at 4.5V and an input capacitance (Ciss) of 360 pF at 6V. Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is well-suited for use in power management, consumer electronics, and industrial automation sectors. Drive voltages range from 1.5V to 4.5V, with a maximum Gate-Source Voltage (Vgs) of ±8V.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFBGA, WLCSP
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Rds On (Max) @ Id, Vgs67mOhm @ 3A, 4.5V
FET Feature-
Power Dissipation (Max)12.5W (Tc)
Vgs(th) (Max) @ Id900mV @ 250µA
Supplier Device Package4-WLCSP (0.78x0.78)
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds360 pF @ 6 V

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