PMCM4401UNEZ
MOSFET N-CH 20V 4WLCSPManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. N-Channel MOSFET, PMCM4401UNEZ, is designed for demanding applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) capability of 5.4A at 25°C junction temperature. The device offers a low on-resistance (Rds On) with a 2.5V gate-source drive voltage. Its compact 4-WLCSP (0.78x0.78) package, measuring 4-XFBGA, is suitable for surface mount applications. With a maximum power dissipation of 400mW and an operating junction temperature up to 150°C, this MOSFET is engineered for reliability. This component is commonly found in consumer electronics, mobile devices, and power management solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-XFBGA, WLCSP |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tj) |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | 400mW |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | 4-WLCSP (0.78x0.78) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±8V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 4.5 V |