PHT6NQ10T,135
MOSFET N-CH 100V 3A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHT6NQ10T-135 is an N-channel MOSFET designed for high-efficiency power switching applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 3A at 25°C ambient temperature. With a maximum on-resistance of 90mOhm at 3A and 10V gate-source voltage, it ensures low conduction losses. The device is housed in a SOT-223 (TO-261-4, TO-261AA) surface-mount package, suitable for automated assembly and efficient thermal management, with a power dissipation of 1.8W (Ta) or 8.3W (Tc). Key electrical parameters include a gate charge of 21 nC (max) and input capacitance of 633 pF (max). Operating temperature range is -65°C to 150°C. This MOSFET is utilized in various industries including automotive, industrial automation, and consumer electronics.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.8W (Ta), 8.3W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 633 pF @ 25 V |
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