PHT4NQ10T,135
MOSFET N-CH 100V 3.5A SOT223Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHT4NQ10T-135 is a 100 V N-channel MOSFET designed for surface-mount applications. This component features a continuous drain current of 3.5 A (Tc) and a maximum power dissipation of 6.9 W (Tc). Key electrical characteristics include a low Rds(on) of 250 mOhm at 1.75 A and 10 V, and a gate charge (Qg) of 7.4 nC at 10 V. Input capacitance (Ciss) is specified at 300 pF at 25 V. The device is housed in a TO-261-4, TO-261AA (SOT-223) package, supplied on tape and reel. Operating temperature range is -65°C to 150°C. This MOSFET is suitable for use in industrial and automotive power management applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-261-4, TO-261AA |
| Mounting Type | Surface Mount |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.9W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | SOT-223 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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