Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

Single FETs, MOSFETs

PHP9NQ20T,127

Banner
productimage

PHP9NQ20T,127

MOSFET N-CH 200V 8.7A TO220AB

Manufacturer: Nexperia USA Inc.

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Nexperia USA Inc. PHP9NQ20T-127 is an N-Channel TrenchMOS™ series power MOSFET. This component features a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 8.7 A at 25°C. The device offers a maximum Power Dissipation (Pd) of 88 W at 25°C (Tc) and a low on-resistance of 400 mOhm at 4.5 A, 10 V. Key parameters include a Gate Charge (Qg) of 24 nC at 10 V and Input Capacitance (Ciss) of 959 pF at 25 V. The PHP9NQ20T-127 is housed in a standard TO-220AB package for through-hole mounting and operates across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for applications in power supplies, motor control, and general-purpose switching.

Additional Information

Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C8.7A (Tc)
Rds On (Max) @ Id, Vgs400mOhm @ 4.5A, 10V
FET Feature-
Power Dissipation (Max)88W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageTO-220AB
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±30V
Drain to Source Voltage (Vdss)200 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds959 pF @ 25 V

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
BSS138P,215

MOSFET N-CH 60V 360MA TO236AB

product image
PMGD290XN,115

MOSFET 2N-CH 20V 0.86A 6TSSOP

product image
PSMN102-200Y,115

MOSFET N-CH 200V 21.5A LFPAK56