PHP20NQ20T,127
MOSFET N-CH 200V 20A TO220ABManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PHP20NQ20T-127 is a N-Channel TrenchMOS™ Power MOSFET with a Drain-to-Source Voltage (Vdss) of 200V. This component features a continuous drain current (Id) of 20A at 25°C and a maximum power dissipation of 150W at the same temperature. The on-resistance (Rds On) is specified at 130mOhm maximum at 10A and 10V. Gate charge (Qg) is 65nC maximum at 10V, and input capacitance (Ciss) is 2470pF maximum at 25V. The device operates within a junction temperature range of -55°C to 175°C and is housed in a TO-220AB package for through-hole mounting. This MOSFET is suitable for applications in power switching and general-purpose power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | TO-220AB |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 25 V |
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