PHK5NQ15T,518
MOSFET N-CH 150V 5A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHK5NQ15T-518 is an N-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 150 V and a continuous Drain Current (Id) capability of 5 A at 25°C (Tc), with a maximum power dissipation of 6.25 W (Tc). The device exhibits a low on-resistance (Rds On) of 75 mOhm at 5 A and 10 V. Key characteristics include a Gate Charge (Qg) of 29 nC at 10 V and an input capacitance (Ciss) of 1150 pF at 25 V. It supports drive voltages ranging from 5 V to 10 V and has a maximum Gate-Source Voltage (Vgs) of ±20V. The PHK5NQ15T-518 is housed in an 8-SOIC (0.154", 3.90mm Width) package, suitable for surface mounting and supplied on Tape & Reel (TR). This MOSFET finds application in power management and switching systems across various industrial sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 25 V |
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