PHK18NQ03LT,518
MOSFET N-CH 30V 20.3A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PHK18NQ03LT-518 is a high-performance N-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current capability of 20.3 A at 25°C. The device exhibits a low on-resistance of 8.9 mOhm at 25 A and 10 V (Vgs). With a maximum power dissipation of 6.25 W at a case temperature, the PHK18NQ03LT-518 is suitable for power management solutions. Key parameters include a gate charge (Qg) of 10.6 nC at 4.5 V and input capacitance (Ciss) of 1380 pF at 12 V. This surface mount component, housed in an 8-SOIC package, operates across a wide temperature range of -55°C to 150°C. Applications include automotive systems and industrial power supplies.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.9mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.6 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1380 pF @ 12 V |
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