PHK13N03LT,518
MOSFET N-CH 30V 13.8A 8SOManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ PHK13N03LT-518 is an N-Channel MOSFET designed for efficient power switching applications. This device features a 30V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 13.8A at 25°C (Tc), with a maximum power dissipation of 6.25W (Tc). The low on-resistance (Rds On) of 20mOhm at 8A and 10V gate-source voltage (Vgs) ensures minimal conduction losses. Key parameters include a gate charge (Qg) of 10.7 nC at 5V Vgs and input capacitance (Ciss) of 752 pF at 15V Vds. The PHK13N03LT-518 operates across a junction temperature range of -55°C to 150°C and is supplied in an 8-SOIC surface mount package, presented on tape and reel. This component is utilized in industries such as automotive and industrial power management.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 13.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | 8-SO |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10.7 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 752 pF @ 15 V |
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