PHD9NQ20T,118
MOSFET N-CH 200V 8.7A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHD9NQ20T-118, offers a 200V drain-to-source voltage and a continuous drain current of 8.7A at 25°C (Tc). This device features a maximum on-resistance of 400mOhm at 4.5A and 10V. The PHD9NQ20T-118 is packaged in a TO-252-3, DPAK (SC-63) surface-mount package, suitable for applications requiring high power dissipation up to 88W (Tc). Key electrical characteristics include a gate charge (Qg) of 24 nC (max) at 10V and input capacitance (Ciss) of 959 pF (max) at 25V. This component is designed for use in demanding applications within the automotive and industrial sectors. It operates across a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 959 pF @ 25 V |
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