PHD97NQ03LT,118
MOSFET N-CH 25V 75A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHD97NQ03LT-118 is an N-channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) of 75 A at 25°C (Tc), with a maximum Power Dissipation of 107 W (Tc). The low on-resistance, specified at a maximum of 6.3 mOhm at 25 A and 10 V Vgs, ensures minimal conduction losses.
Key parameters include a Gate Charge (Qg) of 11.7 nC at 4.5 V and Input Capacitance (Ciss) of 1570 pF at 12 V. The MOSFET supports drive voltages from 4.5 V to 10 V and has a Vgs(th) of 2.15 V at 1 mA. It is housed in a TO-252-3, DPAK (SC-63) surface-mount package and operates across a temperature range of -55°C to 175°C (TJ). This component is commonly utilized in automotive, industrial automation, and power supply systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 107W (Tc) |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11.7 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1570 pF @ 12 V |
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