PHD38N02LT,118
MOSFET N-CH 20V 44.7A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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The Nexperia USA Inc. PHD38N02LT-118 is an N-Channel TrenchMOS™ MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 20V and a continuous drain current (Id) of 44.7A at 25°C (Tc). It boasts a low on-resistance (Rds On) of 16mOhm at 25A and a 5V gate-source voltage (Vgs). The device offers a maximum power dissipation of 57.6W (Tc) and operates within a temperature range of -55°C to 175°C. With a gate charge (Qg) of 15.1 nC at 5V and input capacitance (Ciss) of 800 pF at 20V, this MOSFET is suitable for power management, automotive, and industrial control systems. It is provided in a DPAK surface mount package (TO-252-3, DPAK) and supplied on tape and reel.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 44.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 57.6W (Tc) |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±12V |
| Drain to Source Voltage (Vdss) | 20 V |
| Gate Charge (Qg) (Max) @ Vgs | 15.1 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 20 V |
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