PHD20N06T,118
MOSFET N-CH 55V 18A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. PHD20N06T-118 is an N-Channel TrenchMOS™ power MOSFET designed for demanding applications. This surface mount component features a Drain Source Voltage (Vdss) of 55V and a continuous drain current capability of 18A at 25°C (Tc), with a maximum power dissipation of 51W (Tc). The device exhibits a low on-resistance (Rds On) of 77mOhm at 10A and 10V, and a gate charge (Qg) of 11 nC @ 10V. With a maximum gate-source voltage of ±20V and a threshold voltage (Vgs(th)) of 4V @ 1mA, it is optimized for efficient switching. Operating temperature ranges from -55°C to 175°C (TJ). The TO-252-3, DPAK (2 Leads + Tab), SC-63 package is supplied on tape and reel. This MOSFET is commonly utilized in industrial automation, power supplies, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Rds On (Max) @ Id, Vgs | 77mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 51W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 422 pF @ 25 V |
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