PHD101NQ03LT,118
MOSFET N-CH 30V 75A DPAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PHD101NQ03LT-118, offers a 30V drain-source breakdown voltage and a continuous drain current capability of 75A at 25°C (Tc). This surface mount device, packaged in a DPAK (TO-252-3, DPAK), features a low on-resistance of 5.5mOhm maximum at 25A and 10V Vgs. With a maximum power dissipation of 166W (Tc) and a junction temperature range of -55°C to 175°C, it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 23nC at 5V and input capacitance (Ciss) of 2180pF at 25V. This component finds utility in automotive and industrial power management systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 166W (Tc) |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2180 pF @ 25 V |
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