PHB66NQ03LT,118
MOSFET N-CH 25V 66A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHB66NQ03LT-118 is a high-performance N-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 25V and a continuous Drain Current (Id) of 66A at 25°C, with a maximum power dissipation of 93W at the same temperature. The Rds(on) is specified at a maximum of 10.5mOhm at 25A and 10V gate drive. Key characteristics include a typical Gate Charge (Qg) of 12 nC at 5V and an Input Capacitance (Ciss) of 860 pF at 25V. The MOSFET is housed in a TO-263-3, D2PAK package for efficient surface mounting and operates across an extended temperature range of -55°C to 175°C. This component is suitable for use in automotive, industrial, and power supply sectors.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 66A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 93W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 860 pF @ 25 V |
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