PHB29N08T,118
MOSFET N-CH 75V 27A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHB29N08T-118 is an N-Channel power MOSFET designed for demanding applications. This component features a 75V drain-source breakdown voltage (Vdss) and provides a continuous drain current (Id) of 27A at 25°C (Tc). With a maximum power dissipation of 88W (Tc), it is suitable for high-power switching scenarios. The Rds(on) is specified at a maximum of 50mOhm at 14A and 11V gate drive. Key parameters include a gate charge (Qg) of 19 nC (max) at 10V and input capacitance (Ciss) of 810 pF (max) at 25V. The PHB29N08T-118 utilizes a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial power control, and power supply applications.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 14A, 11V |
| FET Feature | - |
| Power Dissipation (Max) | 88W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 2mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 11V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 75 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 810 pF @ 25 V |
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