PHB20NQ20T,118
MOSFET N-CH 200V 20A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. PHB20NQ20T-118 is a TrenchMOS™ N-Channel Power MOSFET designed for demanding applications. This component offers a 200V drain-source breakdown voltage and a continuous drain current of 20A at 25°C (Tc). Featuring a low on-resistance of 130mOhm maximum at 10A and 10V, it ensures efficient power handling with a maximum power dissipation of 150W (Tc). The device has a gate charge (Qg) of 65 nC maximum at 10V and an input capacitance (Ciss) of 2470 pF maximum at 25V. Operating across a wide temperature range from -55°C to 175°C (TJ), it is housed in a surface-mount D2PAK (TO-263-3, D2PAK) package, supplied on tape and reel. This MOSFET is suitable for use in automotive, industrial, and power supply applications requiring high efficiency and robust performance.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2470 pF @ 25 V |
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