PHB20N06T,118
MOSFET N-CH 55V 20.3A D2PAKManufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PHB20N06T-118 is a high-performance N-channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current capability of 20.3A at 25°C (Tc). The Rds On (Max) is specified at 75mOhm at 10A and 10V Vgs, with a recommended gate drive voltage of 10V.
The PHB20N06T-118 offers a maximum power dissipation of 62W (Tc) and is housed in a TO-263-3, D2PAK surface mount package, facilitating efficient thermal management. Key electrical characteristics include a gate charge (Qg) of 11 nC (Max) at 10V Vgs and an input capacitance (Ciss) of 483 pF (Max) at 25V Vds. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET finds application in power supply units, motor control, and automotive systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | D2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 483 pF @ 25 V |
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