PH955L,115
MOSFET N-CH 55V 62.5A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PH955L-115 is an N-Channel MOSFET designed for high-efficiency power switching applications. This component features a drain-to-source voltage (Vdss) of 55 V and a continuous drain current (Id) of 62.5 A at 25°C (Tc), with a maximum power dissipation of 62.5 W (Tc). The low on-resistance (Rds On) is specified at 8.3 mOhm maximum at 25 A and 10 V gate-source voltage. Key characteristics include a gate charge (Qg) of 42 nC maximum at 5 V and input capacitance (Ciss) of 2836 pF maximum at 25 V. The device is housed in an LFPAK56, Power-SO8 (SC-100, SOT-669) surface mount package, suitable for demanding thermal management. It operates across a wide temperature range of -55°C to 150°C (TJ). This MOSFET is utilized in industries such as automotive, industrial automation, and power supplies.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 62.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.3mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2836 pF @ 25 V |
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