PH5030AL,115
MOSFET N-CH 30V 91A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Nexperia USA Inc. TrenchMOS™ N-Channel Power MOSFET, part number PH5030AL-115. This device features a 30V drain-source breakdown voltage and a continuous drain current of 91A at 25°C case temperature. The low on-resistance is specified at 5mOhm maximum at 15A, 10V gate-source voltage. Key parameters include a gate charge of 29nC maximum at 10V and input capacitance of 1760pF maximum at 12V. The PH5030AL-115 is housed in the LFPAK56 (SOT-669) package, suitable for surface mounting. This component is utilized in automotive and industrial power switching applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 91A (Tc) |
| Rds On (Max) @ Id, Vgs | 5mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 2.15V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1760 pF @ 12 V |
Request a Quote
Clients Also Buy
BSS138P,215
MOSFET N-CH 60V 360MA TO236AB
PMGD290XN,115
MOSFET 2N-CH 20V 0.86A 6TSSOP
PSMN102-200Y,115
MOSFET N-CH 200V 21.5A LFPAK56
