PH4840S,115
MOSFET N-CH 40V 94.5A LFPAK56Manufacturer: Nexperia USA Inc.
Categories: Single FETs, MOSFETs
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Nexperia USA Inc. TrenchMOS™ PH4840S-115 is a high-performance N-channel MOSFET designed for demanding applications. This component features a continuous drain current of 94.5A at 25°C (Tc) and a drain-to-source voltage of 40V. The LFPAK56, Power-SO8 package offers excellent thermal performance with a maximum power dissipation of 62.5W (Tc). Key electrical characteristics include a low on-resistance of 4.1mOhm at 25A and 10V, and a gate charge of 67nC at 10V. Input capacitance (Ciss) is rated at 3660pF at 10V. This MOSFET is suitable for mounting on a surface and operates across a temperature range of -55°C to 150°C (TJ). The PH4840S-115 is commonly utilized in power management, automotive, and industrial power systems.
Additional Information
Series: TrenchMOS™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-100, SOT-669 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 94.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.1mOhm @ 25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 62.5W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1mA |
| Supplier Device Package | LFPAK56, Power-SO8 |
| Drive Voltage (Max Rds On, Min Rds On) | 7V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3660 pF @ 10 V |
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